br 02 1.0 a 2 .0 kv high voltage medium and high current diodes ----------------------------------------------------------------------------------------------------------------------------- ------ gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 8184 9628 fax:0086 - 20 - 8184 9638 201 7 - 10 1 / 2 introduce : hvgt high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. f eatures: 1. high reliability design . 2. high voltage design . 3. high c urrent . 4. conform to rohs and sgs . 5. epoxy resin molded in vacuumhave anticorrosion in the surface . a pplications: 1. h igh voltage multiplier circuit 2. electrostatic generator circuit . 3. g eneral purpose high voltage rectifier. 4. other . mechanical data: 1. case : epoxy resin molding. 2. terminal: w elding axis . 3. net weight : 2.1 grams (approx) . shape display: s ize: (unit:mm) hvgt name : do - 590 maximum ratings and characteristics : ( absolute maximum ratings ) items symbols condition data v alue units repetitive peak renerse voltage v rrm t a = 2 5c 2.0 kv non - repetitive peak renerse voltage v r s m t a = 2 5c -- kv average forward current maximum i favm t a = 5 5 c 1.0 a t oil = 5 5c -- a non - repetitive forward surge current i fsm t a =25c ; 6 0 hz h alf - s ine w ave ; 8.3 ms 40 a junction temperature t j 1 50 c allowable operation case temperature tc - 40~+ 1 50 c storage temperature t stg - 40 ~ + 1 50 c electrical characteristics: t a =25c ( unless o therwise s pecified ) items symbols condition data value units maximum forward voltage drop v f m at 25c ; at i favm 2.4 v maximum reverse current i r1 at 25c ; at v rrm 5.0 ua i r2 at 1 00 c ; at v rrm 50 ua maximum reverse recovery time t rr a t 25c ; i f = 0.5i r ; i r = i favm ; i rr = 0. 25 i r -- ns junction capacitance c j at 25c ; v r =0v ; f=1mhz -- pf
br 02 1.0 a 2 .0 kv high voltage medium and high current diodes ----------------------------------------------------------------------------------------------------------------------------- ------ gete electronic co.,ltd http://www.getedz.com http://www.hvgtsemi.com e - mai: sales@getedz.com getai electronic device co.,ltd tel:0086 - 20 - 8184 9628 fax:0086 - 20 - 8184 9638 201 7 - 10 2 / 2 fig 1 forward current derating curve fig 2 non - repetitive surge current cycles ( 6 0hz) marking type code cathode mark br 02 br 0 2 hvgt
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